光化学-荧光分析法研究——Ⅲ.片剂及注射液中安定的测定

本文提出了测定安定的光化学—荧光分析新方法。安定在含有十二烷基硫酸钠的稀硫酸介质中,经紫外光照射后,产物能发射荧光(=368nm,=476nm)。安定浓度在0～2.5μg/ml范围内,荧光强度与浓度成良好的线性关系。方法的相对标准偏差为1.5％,检出限为0.044μg/ml,可用于片剂及注射液中安定含量的测定。     

LaC_3~n(n=-1,0,+1)分子簇的理论研究(英文)

用密度泛函方法研究了ＬａＣ３ｎ（ｎ＝－１，０，＋１）分子簇的结构和稳定性，对这个四原子体系，提出了５种可能构型，其中３种具有Ｃ２ｖ对称性，２种为Ｃ∞ｖ对称性．在Ｃ２ｖ对称性结构中，其中１个为Ｌａ接在弯曲的Ｃ３链上，第２个是Ｌａ通过２个键与Ｃ３环相链，第３个是Ｌａ通过１个键与Ｃ３环相连；在Ｃ∞ｖ对称性中，第１个Ｌａ接在Ｃ３链的一端，而在第２个构型中，Ｌａ被插入在Ｃ３链中．结果表明，环状结构当Ｌａ接在弯曲的Ｃ３链上的是局域极小值并且最稳定     

Investigation of Antibacterial Activity of Two Kinds of Novel Schiff Bases on Escherichia coli by Microcalorimetry

The microcalorimetric method was used to study the antibacterial activity of two newly synthesized Schiff basecompounds(H_2L~(3')and H_2L~3)on Escherichia coli,trying to obtain the action on both of multiplying bacteria andnon-multiplying bacteria at one experiment.The metabolic power-time curves of the bacteria treated with the com-pounds were obtained,and the thermokinetic parameters were analyzed,from which the antibacterial activities ofthese compounds were evaluated.The results showed that both of the two compounds have good activity on aerobicmultiplying metabolism of E.coli,with the value of IC_(50)75.8 and 168.8 mg/L respectively,but have not effectiveaction on fermentation metabolism of E.coli.The action of the compounds on the non-multiplying metabolism wasinvestigated by taking the heat output of E.coli in the stationary phase as the guideline of the activity.The value ofMSC_(50)(minimum stationary-cidal concentration 50)of them is 118 and 187.5 mg/L,respectively.So,H_2L~(3')hasstronger antibacterial action on E.coli than H_2L~3 either for multiplying bacteria or non-multiplying bacteria,andtheir activity on the aerobic multiplying bacteria of E.coli is mainly shown.It does strongly suggest that the calo-rimetric method should play an important role in the fight against the drug-resistant bacteria.     

水热法制备高纯超细CeO2-ZrO2复合氧化物

Superfine composite powders of CeO₂-ZrO₂ (CZ) and CeO₂-ZrO₂-La₂O₃ (CZL) were prepared by hydrothermal method. The effects of pH、temperature and time for hydrothermal process on the performance of the resulting powders were studied. The optimized reaction parameters were on follows: the precursor′s pH≈9.0, hydrothermal temperature of 200 ℃ holding for 2 h. Thermal stable powders with average particle size smaller than 10 nm and specific surface area of 171 m²·g^-1 were obtained. A BET specific surface area was still at 44 m²·g^-1 after calcination at 1 000 ℃ for 6 hours.     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

矿区植物重金属元素测定的两种前处理方法比较

分别采用酸消解法和干灰化法处理16种矿区植物,并用原子吸收分光光度法测定其中的Mn、Cd、Cr和Zn的含量。结果表明:除Cd外,两种处理方法对Mn、Cr、Zn的测定结果有明显影响。测定植物组织Cd时,两种处理方法都可采用;测定Mn、Cr元素,采用酸消解法较为合适;测定Zn则宜采用干灰化法,并可适当延长木质部分(根、茎)的灰化时间。     

双波长K系数—标准加入吸光光度法同时测定锰和锌

研究应用双波长K系数—标准加入吸光光度法同时测定锰和锌二组分混合物.试验确定了锰和锌测定中K_(Mn)与K_(Zn)的回归方程.对合成试样、人发试样测定,结果满意.     

铜的催化褪色动力学-负吸光度法测定

以催化褪色动力学光度法测铜为例 ,对负吸光度法用于褪色法能提高准确度与灵敏度、扩展线性范围、减小共存离子干扰及操作简便规范等的原因进行了系统的研究 ;实例表明 ,间接摩尔吸光系数为1.71×107L·moL -1·cm -1,可测浓度范围为40～3600ng·L -1及相对标准偏差为0.8%(n=9) ,均明显优于用经典吸光度法测定 ,且催化温度降低 ,反应时间缩短并省去反应抑制剂 ,较原方法易于操作     

Analysis of thermal behaviour of high power semiconductor laser arrays by means of the finite element method (FEM)

New results of steady-state two-dimensional finite-element computations of temperature distributions of high power semiconductor laser arrays are presented. The influence of different thermal loads on the 2D temperature distribution in AlGaAs/GaAs gain-guided laser arrays is investigated. TheFEM model is tested by comparing it with analytical solutions. For numerical convenience, the latter is rewritten in a novel form, which is free of overflow problems. The maximum temperatures calculated by both methods agree within 1%. Several factors determining the thermal resistance of the device are quantitatively examined: the ratio of light emitting to non-emitting areas along the active zone, the amount of Joule losses, the current spreading, the solder thickness, and voids in the solder. This yields design rules for optimum thermal performance.     

Non-stoichiometry of YBa2Cu3O7-d Observed by Repeated Temperature Scanning

Repeated temperature scanning method was applied to observe non-stoichiometry of YBa₂Cu₃O₇-d, and interesting results were obtained. Two simultaneously occurring processes were separately observed in mass change; one is a fast process and the other is slow, so that their responses to the temperature change are quite different from each other. The fast process follows the cyclic temperature change, but the slow process is observed to be a gradual mass change. Kinetic behaviors of these two processes are also made clear by plotting the mass vs. the temperature. Furthermore, a hysteresis loop was observed in the plot of the mass vs. the temperature in a high temperature range presumably due to the third process, and it depends on the heating and cooling rates. This revised version was published online in July 2006 with corrections to the Cover Date.